BD239C NPN SILICON POWER TRANSISTOR
The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is the BD240C
技术特性
应用领域
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内部原理图 |
BD239C 订购信息
| 订购型号 | 产品状态 | 美金价格 | 数量 | 封装 | 包装形式 | 温度范围 | 材料声明 |
| BD239C | Active | 1000 | TO-220AB | Tube | BD239C |
DATASHEET
| 描述 | 版本 | 大小 |
| BD239C :NPN power transistor | 2 | 258KB |
