BUL1102E High voltage fast switching NPN power transistor
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast
技术特性
- High voltage capability
- Very high switching speed
应用领域
- 120 V mains in push-pull configuration
- 277 V mains in half bridge current feed
configuration
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内部原理图
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BUL1102E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| BUL1102EFP |
Active |
|
1000 |
TO-220FP |
Tube |
|
BUL1102EFP |
| BUL1102E |
Active |
|
1000 |
TO-220AB |
Tube |
|
BUL1102E |
DATASHEET
| 描述 |
版本 |
大小 |
| BUL1102E :DS2300: High voltage fast-switching NPN power transistor |
5 |
399KB |
