BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies
技术特性
- STMicroelectronics PREFERRED SALES TYPE
- NPN TRANSISTOR
- HIGH VOLTAGE CAPABILITY
- LOW SPREAD OF DYNAMIC PARAMETERS
- MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
- VERY HIGH SWITCHING SPEED
- INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
应用领域
- ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
- FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
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内部原理图
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BUL128D-B 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| BUL128D-B |
Active |
|
1000 |
TO-220AB |
Tube |
|
BUL128D-B |
DATASHEET
| 描述 |
版本 |
大小 |
| BUL128D-B :DS1564: High voltage fast-switching NPN power transistor |
5 |
224KB |
