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BULB128 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies

技术特性 STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH HOLE I²PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") 应用领域 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

内部原理图

BULB128 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
BULB128-1	Active		1000	I²PAK	Tube		BULB128-1

DATASHEET

描述	版本	大小
BULB128 :DS3495: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR	1	212KB