BULB742C High voltage fast-switching NPN power transistor
The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast
技术特性
- Low spread of dynamic parameters
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
应用领域
- Electronic ballast for fluorescent lighting
- Switch mode power supplies
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内部原理图
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BULB742C 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| BULB742CT4 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
BULB742CT4 |
| BULB742C-1 |
Active |
|
1000 |
I²PAK |
Tube |
|
BULB742C-1 |
DATASHEET
| 描述 |
版本 |
大小 |
| BULB742C :High voltage fast-switching NPN power transistor |
4 |
511KB |
