首页 > ST 意法 > 晶体管 > 功率双极晶体管

BULD118D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies

技术特性 INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 应用领域 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING n FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS

内部原理图

BULD118D 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
BULD118D-1	Active		1000	IPAK	Tube		BULD118D-1

DATASHEET

描述	版本	大小
BULD118D :DS1154: High voltage fast-switching NPN power transistor	3	258KB