BULK128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies
技术特性
应用领域
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内部原理图 |
BULK128D-B 订购信息
| 订购型号 | 产品状态 | 美金价格 | 数量 | 封装 | 包装形式 | 温度范围 | 材料声明 |
| BULK128D-B | NRND | 1000 | SOT-82 | Tube | BULK128D-B |
DATASHEET
| 描述 | 版本 | 大小 |
| BULK128D-B :High voltage fast-switching NPN power transistor | 4 | 218KB |
