IRF630 N-Channel 200V - 0.35 Ohm - 9A - D²PAK MESH OVERLAY(TM) MOSFET
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources
技术特性
- Extremely high dv/dt capability
- Very low intrinsic capacitances
- Gate charge minimized
应用领域
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内部原理图
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IRF630 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| IRF630 |
Active |
0.53 |
1000 |
TO-220AB |
Tube |
|
IRF630 |
DATASHEET
| 描述 |
版本 |
大小 |
| IRF630 :DS0668: N-channel 200V - 0.35Ω - 9A - TO-220/TO-220FP MESH OVERLAY™ Power MOSFET |
9 |
333KB |
