LET16060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

The LET16060C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16060C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications

技术特性

Excellent thermal stability
Common source configuration
POUT(@ 28 V)= 60 W with 13.8 dB gain @ 1600 MHz
BeO free package
In compliance with the 2002/95/EC European directive

引脚输出

LET16060C 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
LET16060C	Active		1000	M243	Loose Piece		LET16060C

DATASHEET

描述	版本	大小
LET16060C :DS8665: RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs	2	143KB

PRODUCT PRESENTATIONS

描述	版本	大小
LET series: The new LDMOS series for applications from 1 MHz to 2 GHz	1.0.0	320KB

SW FUNCTIONS

描述	版本	大小
Mismatch analysis EDA tool	1.0.0	1585KB

FLYERS

描述	版本	大小
FLLET1011 ： LET series: latest LDMOS series for applications from 1 MHz to 2 GHz	1.0	618KB