LET20030C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

The LET20030C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity

技术特性

Excellent thermal stability
Common source configuration
POUT (@28 V) = 45 W with 13.9 dB gain @ 2000 MHz
POUT (@36 V) = 53 W with 13.3 dB gain @ 2000 MHz
BeO free package
In compliance with the 2002/95/EC European directive

引脚输出

LET20030C 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
LET20030C	Evaluation		1000	M243	Loose Piece		LET20030C

DATASHEET

描述	版本	大小
LET20030C :DS7309: RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs	1	624KB

PRODUCT PRESENTATIONS

描述	版本	大小
LET series: The new LDMOS series for applications from 1 MHz to 2 GHz	1.0.0	320KB

SW FUNCTIONS

描述	版本	大小
Mismatch analysis EDA tool	1.0.0	1585KB

FLYERS

描述	版本	大小
FLLET1011 ： LET series: latest LDMOS series for applications from 1 MHz to 2 GHz	1.0	618KB