LET20045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity
技术特性
- Excellent thermal stability
- Common source configuration
- POUT (@ 28 V)= 54 W with 13.3 dB gain @ 2000 MHz
- POUT (@ 36 V)= 65 W with 12.5 dB gain @ 2000 MHz
- BeO free package
- In compliance with the 2002/95/EC European directive
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引脚输出
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LET20045C 订购信息
订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
LET20045C |
Active |
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1000 |
M243 |
Loose Piece |
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LET20045C |
DATASHEET
描述 |
版本 |
大小 |
LET20045C :DDS8575: RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs |
1 |
627KB |
PRODUCT PRESENTATIONS
SW FUNCTIONS
FLYERS
描述 |
版本 |
大小 |
FLLET1011 : LET series: latest LDMOS series for applications from 1 MHz to 2 GHz |
1.0 |
618KB |