LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
The LET9060F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060F is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.
技术特性
- Excellent thermal stability
- Common source configuration
- POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz
- POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz
- BeO free package
- In compliance with the 2002/95/EC european directive
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引脚输出
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LET9060F 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| LET9060F |
Active |
|
1000 |
M246 |
Loose Piece |
|
LET9060F |
DATASHEET
| 描述 |
版本 |
大小 |
| LET9060F :DS6626: RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs |
3 |
149KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1294: PowerSO-10RF: the first true RF power SMD package |
3 |
1021KB |
PRODUCT PRESENTATIONS
SW FUNCTIONS
FLYERS
| 描述 |
版本 |
大小 |
| FLLET1011 ： LET series: latest LDMOS series for applications from 1 MHz to 2 GHz |
1.0 |
618KB |
