LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

The LET9060F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060F is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

技术特性
  • Excellent thermal stability
  • Common source configuration
  • POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz
  • POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz
  • BeO free package
  • In compliance with the 2002/95/EC european directive
引脚输出
LET9060F 功能框图
LET9060F 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
LET9060F Active   1000 M246 Loose Piece   LET9060F
DATASHEET
描述 版本 大小
LET9060F :DS6626: RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs 3 149KB
APPLICATION NOTES
描述 版本 大小
AN1294: PowerSO-10RF: the first true RF power SMD package 3 1021KB
PRODUCT PRESENTATIONS
描述 版本 大小
LET series: The new LDMOS series for applications from 1 MHz to 2 GHz 1.0.0 320KB
SW FUNCTIONS
描述 版本 大小
Mismatch analysis EDA tool 1.0.0 1585KB
FLYERS
描述 版本 大小
FLLET1011 : LET series: latest LDMOS series for applications from 1 MHz to 2 GHz 1.0 618KB