LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
The LET9120 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz
技术特性
- Excellent thermal stability
- Common source configuration push-pull
- POUT = 120 W with 18 dB gain @ 860 MHz
- BeO free package
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引脚输出
![LET9120 功能框图](/image/st/LET9120.jpg) |
LET9120 订购信息
订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
LET9120 |
Active |
|
1000 |
M246 |
Loose Piece |
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LET9120 |
DATASHEET
描述 |
版本 |
大小 |
LET9120 :RF power transistor from the LdmoST family of n-channel ehancement-mode lateral MOSFETs |
4 |
80KB |
APPLICATION NOTES
描述 |
版本 |
大小 |
AN1294: PowerSO-10RF: the first true RF power SMD package |
3 |
1021KB |
PRODUCT PRESENTATIONS
SW FUNCTIONS
FLYERS
描述 |
版本 |
大小 |
FLLET1011 : LET series: latest LDMOS series for applications from 1 MHz to 2 GHz |
1.0 |
618KB |