M48Z12 ZEROPOWER SRAM_BDTIC 代理M48Z12

M48Z12 ZEROPOWER SRAM

The M48Z02/12 ZEROPOWER®RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220.

A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory solution.

The M48Z02/12 button cell has sufficient capacity and storage life to maintain data functionality for an accumulated time period of at least 10 years in the absence of power over commercial operating temperature range.

The M48Z02/12 is a non-volatile pin and function equivalent to any JEDEC standard 2 K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed

技术特性

Integrated, ultra low power SRAM and power-fail control circuit
Unlimited WRITE cycles
READ cycle time equals WRITE cycle time
Automatic power-fail chip deselect and WRITE protection
WRITE protect voltages (VPFD= power-fail deselect voltage):
- M48Z02: VCC= 4.75 to 5.5 V; 4.5 V ≤ VPFD≤ 4.75 V
- M48Z12: VCC= 4.5 to 5.5 V; 4.2 V ≤ VPFD≤ 4.5 V
Self-contained battery in the CAPHAT™ DIP package
Pin and function compatible with JEDEC standard 2 K x 8 SRAMs
RoHS compliant
- Lead-free second level interconnect

功能框图

M48Z12 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
M48Z12-70PC1	Active		1000	PDIP 24 .7	Tube		M48Z12-70PC1
M48Z12-150PC1	Active		1000	PDIP 24 .7	Tube		M48Z12-150PC1

DATASHEET

描述	版本	大小
M48Z12 : DS0497: 5 V, 16 Kbit (2 Kb x 8) ZEROPOWER® SRAM	9	339KB

APPLICATION NOTES

描述	版本	大小
AN1012 : Predicting the battery life and data retention period of NVRAMs and serial RTCs	4	440KB
AN1011 : Battery technology used in NVRAM and real-time clock (RTC) products from ST	4	249KB
AN1009 : 'Negative undershoot' NVRAM data corruption	1	34KB