M48Z18 ZEROPOWER SRAM_BDTIC 代理M48Z18

M48Z18 ZEROPOWER SRAM

The M48Z08/18 ZEROPOWER®RAM is an 8 K x 8 non-volatile static RAM which is pin and function compatible with the DS1225.

The monolithic chip provides a highly integrated battery-backed memory solution.

The M48Z08/18 is a non-volatile pin and function equivalent to any JEDEC standard 8 K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special write timing or limitations on the number of writes that can be performed.

The 28-pin, 600 mil DIP CAPHAT™houses the M48Z08/18 silicon with a long-life lithium button cell in a single package

技术特性

Integrated, ultra low power SRAM and power-fail control circuit
Unlimited WRITE cycles
READ cycle time equals WRITE cycle time
Automatic power-fail chip deselect and WRITE protection
WRITE protect voltages (VPFD= power-fail deselect voltage):
- M48Z08: VCC = 4.75 to 5.5 V; 4.5 V ≤ VPFD≤ 4.75 V
- M48Z18: VCC= 4.5 to 5.5 V; 4.2 V ≤ VPFD≤ 4.5 V
Self-contained battery in the CAPHAT™ DIP package
Pin and function compatible with JEDEC standard 8 K x 8 SRAMs
RoHS compliant
- Lead-free second level interconnect

功能框图

M48Z18 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
M48Z18-70PC1	Active		1000	PDIP 28 .7	Tube		M48Z18-70PC1
M48Z18-100PC1	Active		1000	PDIP 28 .7	Tube		M48Z18-100PC1

DATASHEET

描述	版本	大小
M48Z18 : DS0498: 5 V, 64 Kbit (8 Kb x 8) ZEROPOWER® SRAM	8	303KB

APPLICATION NOTES

描述	版本	大小
AN1012 : Predicting the battery life and data retention period of NVRAMs and serial RTCs	4	440KB
AN1011 : Battery technology used in NVRAM and real-time clock (RTC) products from ST	4	249KB
AN1009 : 'Negative undershoot' NVRAM data corruption	1	34KB