M48Z2M1V ZEROPOWER SRAM
The M48Z2M1Y/V ZEROPOWER®RAM is a non-volatile 16,777,216-bit, static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36-pin DIP, long module.
The ZEROPOWER RAM replaces industry standard SRAMs. It provides the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed
技术特性
- Integrated, ultra low power SRAM, power-fail control circuit, and batteries
- Conventional SRAM operation; unlimited WRITE cycles
- 10 years of data retention in the absence of power
- Automatic power-fail chip deselect and WRITE protection
- WRITE protect voltages (VPFD= power-fail deselect voltage):
- M48Z2M1Y: VCC= 4.5 to 5.5 V; 4.2 V ≤ VPFD≤ 4.5 V
- M48Z2M1V: VCC= 3.0 to 3.6 V; 2.8 V ≤ VPFD≤ 3.0 V
- Batteries are internally isolated until power is applied
- Pin and function compatible with JEDEC standard 2 Mb x 8 SRAMs
- RoHS compliant
- Lead-free second level interconnect
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功能框图
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M48Z2M1V 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| M48Z2M1V-85PL1 |
NRND |
|
1000 |
HYBRID 36L .6 |
Tube |
|
M48Z2M1V-85PL1 |
DATASHEET
| 描述 |
版本 |
大小 |
| M48Z2M1V : DS1111: 5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER® SRAM |
6 |
306KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1012 : Predicting the battery life and data retention period of NVRAMs and serial RTCs |
4 |
440KB |
| AN1011 : Battery technology used in NVRAM and real-time clock (RTC) products from ST |
4 |
249KB |
| AN1009 : 'Negative undershoot' NVRAM data corruption |
1 |
34KB |
