M48Z58Y ZEROPOWER SRAM_BDTIC 代理M48Z58Y

M48Z58Y ZEROPOWER SRAM

The M48Z58/Y ZEROPOWER®RAM is an 8 Kbit x 8 non-volatile static RAM that integrates power-fail deselect circuitry and battery control logic on a single die. The monolithic chip is available in two special packages to provide a highly integrated battery-backed memory solution.

The M48Z58/Y is a non-volatile pin and function equivalent to any JEDEC standard 8 K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed.

The 28-pin, 600 mil DIP CAPHAT™houses the M48Z58/Y silicon with a long life lithium button cell in a single package.

The 28-pin, 330 mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT®housing containing the battery. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is keyed to prevent reverse insertion.

The SOIC and battery packages are shipped separately in plastic anti-static tubes or in tape & reel form.

For the 28-lead SOIC, the battery package (e.g., SNAPHAT) part number is “M4Z28-BR00SH1”.

技术特性

Integrated, ultra low power SRAM, power-fail control circuit, and battery
READ cycle time equals WRITE cycle time
Automatic power-fail chip deselect and WRITE protection
WRITE protect voltages: (VPFD= power-fail deselect voltage)
- M48Z58: VCC= 4.75 to 5.5 V; 4.5 V ≤ VPFD≤ 4.75 V
- M48Z58Y: VCC= 4.5 to 5.5 V; 4.2 V ≤ VPFD≤ 4.5 V
Self-contained battery in the CAPHAT™DIP package
Packaging includes a 28-lead SOIC and SNAPHAT®top (to be ordered separately)
SOIC package provides direct connection for a SNAPHAT®top which contains the battery
Pin and function compatible with JEDEC standard 8 Kbit x 8 SRAMs
RoHS compliant
- Lead-free second level interconnect

功能框图

M48Z58Y 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
M48Z58Y-70PC1	Active		1000	PDIP 28 .7	Tube		M48Z58Y-70PC1
M48Z58Y-70MH1F	Active		1000	SO-28	Tube		M48Z58Y-70MH1F

DATASHEET

描述	版本	大小
M48Z58Y : DS0515: 5 V, 64 Kbit (8 Kbit x 8) ZEROPOWER® SRAM	11	413KB

APPLICATION NOTES

描述	版本	大小
AN1012 : Predicting the battery life and data retention period of NVRAMs and serial RTCs	4	440KB
AN1011 : Battery technology used in NVRAM and real-time clock (RTC) products from ST	4	249KB
AN1009 : 'Negative undershoot' NVRAM data corruption	1	34KB