MJD112 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration
技术特性
- Good hFE linearity
- High fT frequency
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
应用领域
- Linear and switching industrial equipment
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内部原理图
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MJD112 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| MJD112T4 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
MJD112T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| MJD112 :Complementary power Darlington transistors |
3 |
383KB |
