MJD122 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage
技术特性
- Low collector-emitter saturation voltage
- Integrated antiparallel collector-emitter diode
应用领域
- General purpose linear and switching
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内部原理图
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MJD122 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| MJD122T4 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
MJD122T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| MJD122 :DS0777: Complementary power Darlington transistors |
11 |
577KB |
