MJD31C Low voltage NPN power transistor
The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage
技术特性
- Surface-mounting TO-252 power package in tape and reel
- Complementary to the PNP type MJD32C
应用领域
- General purpose linear and switching
equipment
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内部原理图
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MJD31C 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| MJD31CT4 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
MJD31CT4 |
DATASHEET
| 描述 |
版本 |
大小 |
| MJD31C :DS0779: Low voltage NPN power transistor |
5 |
400KB |
