MJD32C Low voltage PNP power transistor

The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage

技术特性
  • Surface-mounting TO-252 power package in tape and reel
  • Complementary to the NPN type MJD31C
应用领域
  • General purpose linear and switching equipment
内部原理图
MJD32C 功能框图
MJD32C 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
MJD32CT4 Active   1000 DPAK Tape And Reel   MJD32CT4
DATASHEET
描述 版本 大小
MJD32C :DS5358: Low voltage PNP power transistor 4 408KB