MJD45H11 Complementary power transistors
These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications
技术特性
- Low collector-emitter saturation voltage
- Fast switching speed
- Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")
应用领域
- Power amplifier
- Switching circuits
|
内部原理图
 |
MJD45H11 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| MJD45H11T4 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
MJD45H11T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| MJD45H11 :DS1232: Complementary power transistors |
4 |
396KB |
