MJE802 SILICON NPN POWER DARLINGTON TRANSISTORS

The device is manufactured in planar technology with "base island" layout and monolithic Darlington configuration.

技术特性
  • Good hFE linearity
  • High fT frequency
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
应用领域
  • Linear and switching industrial equipment
内部原理图
MJE802 功能框图
MJE802 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
MJE802 NRND   1000 SOT-32 Tube   MJE802
DATASHEET
描述 版本 大小
MJE802 :DS1054: NPN power Darlington transistor 4 254KB