PD20015C RF Power LDMOS transistor
The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz.
PD20015C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology.
PD20015C’s superior linearity performance makes it an ideal solution for mobile application
技术特性
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PD20015C 订购信息
| 订购型号 | 产品状态 | 美金价格 | 数量 | 封装 | 包装形式 | 温度范围 | 材料声明 |
| PD20015C | Active | 1000 | M243 | Loose Piece | PD20015C |
DATASHEET
| 描述 | 版本 | 大小 |
| PD20015C :DS5580: RF power transistor, LdmoST family | 2 | 148KB |
