PD54003-E RF Power LDMOS transistor
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true surface-mount device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly
技术特性
- Excellent thermal stability
- Common source configuration
- POUT = 3 W with 12 dB gain @ 500 MHz
- New RF plastic package
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引脚定义图
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PD54003-E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| PD54003-E |
Active |
|
1000 |
PowerSO-10RF (formed lead) |
Tube |
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PD54003-E |
DATASHEET
| 描述 |
版本 |
大小 |
| PD54003-E :DS4692: RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
4 |
639KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1294: PowerSO-10RF: the first true RF power SMD package |
3 |
1021KB |
PRODUCT PRESENTATIONS
SW FUNCTIONS
FLYERS
| 描述 |
版本 |
大小 |
| FLLET1011 ： LET series: latest LDMOS series for applications from 1 MHz to 2 GHz |
1.0 |
618KB |
