PD55003L-E RF Power LDMOS transistor

The PD55003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003L-E boasts the excellent gain, linearity and reliability of STH1LV latest LD-MOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.

PD55003L-E’s superior linearity performances makes it an ideal solution for car mobile radio

技术特性
  • Excellent thermal stability
  • Common source configuration
  • POUT=3 W mith 17dB gain@500 MHz/12.5 V
  • New leadless plastic package
  • ESD protection
  • Supplied in tape and reel of 3 K units
  • In compliance with 2002/95/EC european directive
引脚定义图
PD55003L-E 功能框图
PD55003L-E 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
PD55003L-E Active   1000 PowerFLAT 5x5 Tape And Reel   PD55003L-E
DATASHEET
描述 版本 大小
PD55003L-E :DS4622: RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 2 257KB