PD55008L-E RF Power LDMOS transistor
The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies up to 1GHz.
PD55008L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. PD55008LE’s superior linearity performance makes it an ideal solution for car mobile radio
技术特性
- Excellent thermal stability
- Common source configuration
- POUT = 8W with 17dB gain @ 500MHz / 12.5V
- Integrated ESD protection
- New leadless plastic package
- Supplied in tape and reel of 3K units
- In compliance with 2002/95/EC european directive
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引脚定义图
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PD55008L-E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| PD55008L-E |
Active |
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1000 |
PowerFLAT 5x5 |
Tape And Reel |
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PD55008L-E |
DATASHEET
| 描述 |
版本 |
大小 |
| PD55008L-E :DS4701: RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs |
2 |
188KB |
