PD57018-E RF Power LDMOS transistors

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

技术特性
  • Excellent thermal stability
  • Common source configuration
  • POUT = 18 W with 16.5dB gain@945 MHz/28 V
  • New RF plastic package
引脚定义图
PD57018-E 功能框图
PD57018-E 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
PD57018TR-E Active   1000 PowerSO-10RF (formed lead) Tape And Reel   PD57018TR-E
PD57018S-E Active   1000 PowerSO-10RF (straight lead) Tube   PD57018S-E
PD57018-E Active   1000 PowerSO-10RF (formed lead) Tube   PD57018-E
PD57018STR-E Active   1000 PowerSO-10RF (straight lead) Tape And Reel   PD57018STR-E
DATASHEET
描述 版本 大小
PD57018-E :DS4683: RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 5 939KB
APPLICATION NOTES
描述 版本 大小
AN1294: PowerSO-10RF: the first true RF power SMD package 3 1021KB
PRODUCT PRESENTATIONS
描述 版本 大小
LET series: The new LDMOS series for applications from 1 MHz to 2 GHz 1.0.0 320KB
SW FUNCTIONS
描述 版本 大小
Mismatch analysis EDA tool 1.0.0 1585KB
FLYERS
描述 版本 大小
FLLET1011 : LET series: latest LDMOS series for applications from 1 MHz to 2 GHz 1.0 618KB