PD57070S-E RF POWER transistor, LdmoST plastic family
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
技术特性
- Excellent thermal stability
- Common source configuration
- POUT = 70 W with 14.7dB gain @945 MHz/28 V
- New RF plastic package
|
引脚定义图
 |
PD57070S-E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| PD57070S-E |
Active |
|
1000 |
PowerSO-10RF (straight lead) |
Tube |
|
PD57070S-E |
DATASHEET
| 描述 |
版本 |
大小 |
| PD57070S-E :RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
2 |
518KB |
