PD84006-E RF Power LDMOS transistor

The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF ’s superior linearity performance makes it an ideal solution for portable radio and UHF RFID reader. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly

技术特性
  • Excellent thermal stability
  • Common source configuration
  • Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz
  • Plastic package
  • ESD protection
  • In compliance with the 2002/95/EC European directive
引脚定义图
PD84006-E 功能框图
PD84006-E 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
PD84006-E Active   1000 PowerSO-10RF (formed lead) Tube   PD84006-E
DATASHEET
描述 版本 大小
PD84006-E :DS6422: RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs 2 209KB
APPLICATION NOTES
描述 版本 大小
AN1294: PowerSO-10RF: the first true RF power SMD package 3 1021KB
PRODUCT PRESENTATIONS
描述 版本 大小
LET series: The new LDMOS series for applications from 1 MHz to 2 GHz 1.0.0 320KB
SW FUNCTIONS
描述 版本 大小
Mismatch analysis EDA tool 1.0.0 1585KB
FLYERS
描述 版本 大小
FLLET1011 : LET series: latest LDMOS series for applications from 1 MHz to 2 GHz 1.0 618KB