PD85006L-E RF Power LDMOS transistor
The PD85006L-E is a common source N-channel, enhancement-mode lateral Field- Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.
PD85006L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package , PowerFLAT™. PD85006L-E’s superior linearity performance makes it an ideal solution for mobile radio applications
技术特性
- Excellent thermal stability
- Common source configuration
- POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V
- Plastic package
- ESD protection
- In compliance with the 2002/95/EC european directive
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引脚定义图
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PD85006L-E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| PD85006L-E |
Active |
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1000 |
PowerFLAT 5x5 |
Tape And Reel |
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PD85006L-E |
DATASHEET
| 描述 |
版本 |
大小 |
| PD85006L-E :RF power transistor the LdmoST plastic family |
1 |
563KB |
