PD85015-E RF Power LDMOS transistors
The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, linearity and reliability thanks to ST's latest LDMOS technology mounted on the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity of the device makes it an ideal solution for car radios. The PowerSO-10 plastic package, designed for high reliability, is the first JEDEC approved, high power SMD package from ST. It is optimized for RF requirements, and offers excellent RF performance and ease of assembly
技术特性
- Excellent thermal stability
- Common source configuration
- POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V
- Plastic package
- ESD protection
- In compliance with the 2002/95/EC European directive
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引脚定义图
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PD85015-E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| PD85015TR-E |
Active |
|
1000 |
PowerSO-10RF (formed lead) |
Tape And Reel |
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PD85015TR-E |
| PD85015S-E |
Active |
|
1000 |
PowerSO-10RF (straight lead) |
Tube |
|
PD85015S-E |
| PD85015-E |
Active |
|
1000 |
PowerSO-10RF (formed lead) |
Tube |
|
PD85015-E |
| PD85015STR-E |
Active |
|
1000 |
PowerSO-10RF (straight lead) |
Tape And Reel |
|
PD85015STR-E |
DATASHEET
| 描述 |
版本 |
大小 |
| PD85015-E :DS5731: RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs |
4 |
250KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1294: PowerSO-10RF: the first true RF power SMD package |
3 |
1021KB |
PRODUCT PRESENTATIONS
SW FUNCTIONS
FLYERS
| 描述 |
版本 |
大小 |
| FLLET1011 ： LET series: latest LDMOS series for applications from 1 MHz to 2 GHz |
1.0 |
618KB |
