PD85025C RF Power LDMOS transistor
The PD85025C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85025C’s superior linearity performance makes it an ideal solution for mobile applications
技术特性
- Excellent thermal stability
- Common source configuration
- POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V
- BeO free package
- ESD protection
- In compliance with the 2002/95/EC european directive
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引脚输出
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PD85025C 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| PD85025C |
Active |
|
1000 |
M243 |
Loose Piece |
|
PD85025C |
DATASHEET
| 描述 |
版本 |
大小 |
| PD85025C :DS5621: RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs |
2 |
186KB |
