SD56120 RF Power LDMOS transistor
The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity
技术特性
- Excellent thermal stability
- Common source configuration Push-pull
- POUT = 100W with 14dB gain @ 860MHz
- BeO free package
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引脚输出
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SD56120 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| SD56120 |
Active |
|
1000 |
M246 |
Loose Piece |
|
SD56120 |
DATASHEET
| 描述 |
版本 |
大小 |
| SD56120 :DS1822: RF power transistor, the LdmoST family |
4 |
225KB |
