SD57120 RF Power LDMOS transistor
The SD57120 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in common source mode at 28V. Its internal matching makes it ideal for base station applications requiring high linearity
技术特性
- Excellent thermal stability
- Common source configuration push-pull
- POUT = 120W with 13dB gain @ 960MHz
- BeO free package
- Internal input matching
- In compliance with the 2002/95/EC european directive
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引脚输出
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SD57120 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| SD57120 |
Active |
|
1000 |
M252 |
Tube |
|
SD57120 |
DATASHEET
| 描述 |
版本 |
大小 |
| SD57120 :RF power transistor the LdmoST family |
7 |
353KB |
