The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications.
技术特性
应用领域
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内部原理图 |
订购型号 | 产品状态 | 美金价格 | 数量 | 封装 | 包装形式 | 温度范围 | 材料声明 |
ST13003D-K | Active | 1000 | SOT-32 | Tube | ST13003D-K |
描述 | 版本 | 大小 |
ST13003D-K :DS5601: High voltage fast-switching NPN power transistor | 2 | 140KB |