ST13003N High voltage fast-switching NPN power transistor
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA
技术特性
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed
应用领域
- Compact fluorescent lamps (CFLs)
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内部原理图
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ST13003N 订购信息
订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
ST13003N |
NRND |
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1000 |
SOT-32 |
Tube |
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ST13003N |
DATASHEET
描述 |
版本 |
大小 |
ST13003N :High voltage fast-switching NPN power transistor |
2 |
220KB |