ST13005N High voltage fast-switching NPN power transistor
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA
技术特性
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
应用领域
- Electronic ballast for fluorescent lighting
- Switch mode power supplies
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内部原理图
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ST13005N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| ST13005N |
Active |
|
1000 |
TO-220AB |
Tube |
|
ST13005N |
DATASHEET
| 描述 |
版本 |
大小 |
| ST13005N :DS2309: High voltage fast-switching NPN power transistor |
3 |
273KB |
