ST13007 High voltage fast-switching NPN power transistor
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
They use a Cellular Emitter structure to enhance switching speeds
技术特性
- IMPROVED SPECIFICATION:
- DC CURRENT GAIN PRESELECTION
- TIGHTER STORAGE TIME RANGE
- HIGH VOLTAGE CAPABILITY
- NPN TRANSISTOR
- LOW SPREAD OF DYNAMIC PARAMETERS
- MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
- VERY HIGH SWITCHING SPEED
- FULLY CHARACTERIZED AT 125 °C
- LARGE RBSOA
应用领域
- Electronic ballast for fluorescent lighting
- Switch mode power supplies
|
内部原理图
 |
ST13007 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| ST13007 |
Active |
|
1000 |
TO-220AB |
Tube |
|
ST13007 |
DATASHEET
| 描述 |
版本 |
大小 |
| ST13007 :High voltage fast-switching NPN power transistor |
4 |
254KB |
