STAP57045 RF Power LDMOS in STAP1 plastic package

The STAP57045 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. STAP57045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package.

STAP package has been specially optimized for RF needs and offers excellent performances and ease of assembly.

Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)

技术特性

Excellent thermal stability
Common source configuration
POUT = 45 W with 13 dB gain @ 945 MHz / 28 V
ST advanced PowerSO-10RF-STAP package

引脚输出

STAP57045 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
STAP57045W	Proposal		1000				STAP57045W

DATASHEET

描述	版本	大小
STAP57045 :DS6174: RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs	1	363KB