STAP85035 RF LDMOS in STAP1 plastic package

The STAP85035 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. STAP85035 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP ST Advanced PowerSO-10RF package.

STAP85035’s superior linearity performance makes it an ideal solution for car mobile radio.

The STAP plastic package was designed to offer high reliability and high power capability.

It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly

技术特性

Excellent thermal stability
Common source configuration
POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V
Plastic package
ESD protection
In compliance with the 2002/95/EC European directive

引脚输出

STAP85035 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
STAP85035	Preview		1000	PowerSo 2	Tube		STAP85035

DATASHEET

描述	版本	大小
STAP85035 :DS6188: RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs	2	183KB