START499D NPN RF transistor
The START499D provide the market with a Si state-of-art RF process. Manufactured with ST 3rdgeneration bipolar process, it offers the highest power, gain and efficiency in SOT-89 for given breakdown voltage (BVCEo). START499D is suitable for a wide range of application up to 1 GHz
技术特性
- High efficiency
- Common emitter configuration
- Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz
- Plastic package
- Linear and non linear operation
- Supplied in tape and reel
- In compliance with the 2002/95/EC european directive
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引脚输出
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START499D 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| START499D |
NRND |
|
1000 |
SOT-89 |
Tape And Reel |
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START499D |
DATASHEET
| 描述 |
版本 |
大小 |
| START499D :NPN RF silicon transistor |
4 |
233KB |
