STB11NM80 N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in D²PAK

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

技术特性

Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)*Qg in the industry

应用领域

Switching applications

内部原理图

STB11NM80 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
STB11NM80T4	NRND		1000	D²PAK	Tape And Reel		STB11NM80T4

DATASHEET

描述	版本	大小
STB11NM80 :DS3013: N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247	11	905KB

APPLICATION NOTES

描述	版本	大小
AN1703: Guidelines for using ST's MOSFET smd Packages	1	760KB