STB12NK80Z N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D²PAK package
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications
技术特性
- Extremely high dv/dt capability
- Improved esd capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing reliability
应用领域
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内部原理图
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STB12NK80Z 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB12NK80ZT4 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB12NK80ZT4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB12NK80Z :DS3339: N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 |
7 |
691KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
