STB13005 High voltage fast-switching NPN power transistor
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA
技术特性
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
- Through hole TO-262 (I²PAK) power package in tube (suffix “-1”)
应用领域
- Electronic ballast for fluorescent lighting
- Switch mode power supplies
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内部原理图
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STB13005 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB13005 |
NRND |
|
1000 |
I²PAK |
Tube |
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STB13005 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB13005 :High voltage fast-switching NPN power transistor |
1 |
211KB |
