STB13007DT4 High voltage fast-switching NPN power transistor
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds
技术特性
- Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
- High voltage capability
- Integrated free-wheeling diode
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
- Fully characterized at 125 ˚C
- Large RBSOA
- In compliance with the 2002/93/EC European Directive
应用领域
- Electronic ballast for fluorescent lighting
- Switch mode power supplies
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内部原理图
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STB13007DT4 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB13007DT4 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
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STB13007DT4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB13007DT4 :DS4802: High voltage fast-switching NPN power transistor |
2 |
229KB |
