STB155N3H6 N-channel 30 V, 2.5 mOhm, 80 A, D²PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
应用领域
- Switching applications
- Automotive
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内部原理图
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STB155N3H6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB155N3H6 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
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STB155N3H6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB155N3H6 :DS9117: N-channel 30 V, 2.4 mΩ typ., 80 A, STripFET™ VI DeepGATE™ Power MOSFET in D²PAK package |
1 |
990KB |
PRODUCT PRESENTATIONS
