STB18NF25 N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET(TM) II Power MOSFET in D²PAK package
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements
技术特性
- Low gate charge
- 100% avalanche tested
- Exceptional dv/dt capability
应用领域
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内部原理图
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STB18NF25 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB18NF25 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB18NF25 |
| STB18NF25T4 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB18NF25T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB18NF25 :DS6601: N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET™ II Power MOSFET in D²PAK and DPAK packages |
3 |
981KB |
