STB23NM60ND N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D²PAK
These devices are made using the second generation of MDmesh™technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STB23NM60ND 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB23NM60ND |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB23NM60ND |
DATASHEET
| 描述 |
版本 |
大小 |
| STB23NM60ND :DS6645: N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET |
4 |
863KB |
CONFERENCE PAPERS
