STB24NM65N N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I²PAK - TO-247 second generation MDmesh™ Power MOSFET
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STB24NM65N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB24NM65N |
NRND |
|
1000 |
D²PAK |
Tape And Reel |
|
STB24NM65N |
DATASHEET
| 描述 |
版本 |
大小 |
| STB24NM65N :N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TP-220FP - D²PAK - I²PAK - TO-247 second generation MDmesh™ Power MOSFET |
1 |
557KB |
